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HIGH-POWER GaAlAs IR EMITTERS
OD-880L
GLASS
DOME
.183 .152
.186 .156
.015
1.00
MIN.
ANODE
(CASE)
.100
.209
.220
FEATURES
? High reliability liquid-phase epitaxially grown GaAlAs
? 880nm peak emission for optimum matching with
ODD-45W photodiode
? Wide range of linear power output
? Hermetically sealed TO-46 package
? Medium emission angle for best coverage/power
density
.024
.043
.143
.150
.017
CATHODE
.036
45°
.041
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Radiant Intensity, I e
Peak Emission Wavelength, λ P
Spectral Bandwidth at 50%, Δλ
TEST CONDITIONS
I F = 100mA
I F = 50mA
MIN
18
TYP
20
50
880
80
MAX
UNITS
mW
mW/sr
nm
nm
Half Intensity Beam Angle, θ
35
Deg
Forward Voltage, V F
I F = 100mA
1.55
1.9
Volts
Reverse Breakdown Voltage, V R
Capacitance, C
Rise Time
Fall Time
I R = 10 μ A
V R = 0V
5
30
17
0.5
0.5
Volts
pF
μ sec
μ sec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation 1
Continuous Forward Current
Peak Forward Current (10 μ s, 400Hz) 2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R THJA1
Thermal Resistance, R THJA2
190mW
100mA
3A
5V
260°C
-55°C TO 100°C
100°C
400°C/W Typical
135°C/W Typical
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
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